SCTMU001F n-channel sic power mosfet ? features 132w 1) low on-resistance 400v 120m ? 20a v dss r ds(on) (typ.) i d p d ? outline ? inner circuit ? packaging specifications to220ab v gss a v -6 to 22 50 5) simple to drive 3) fast reverse recovery gate - source voltage parameter t c = 25 ? c drain - source voltage continuous drain current pulsed drain current ? absolute maximum ratings (t a = 25 ? c) 2) fast switching speed ? application ?audio 6) pb-free lead plating ; rohs compliant 4) easy to parallel range of storage temperature t stg power dissipation (t c = 25 ? c) junction temperature p d t j symbol 20 - SCTMU001F 150 ? c w ? c -55 to ? 150 132 tube - type packing reel size (mm) taping code basic ordering unit (pcs) tape width (mm) - 60 marking i d,pulse *2 v dss i d *1 unit 400 a value v (1) gate (2) drain (3) source *1 body diode (1) (3) (2) *1 1/9 2013.12 - rev.a datasheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved.
SCTMU001F *1 limited only by maximum temperature allowed. *2 pw ? 10 ? s, duty cycle ? 1% *3 pulsed 265- max. gate - source leakage current i gss- v gs = -6v, v ds = 0v - -100 parameter parameter na max. min. ? thermal resistance thermal resistance, junction - case symbol 0.72- typ. min. v (br)dss v gs = 0v, i d = 1ma - r thjc drain - source breakdown voltage ? electrical characteristics (t a = 25 ? c) t sold soldering temperature, wavesoldering for 10s conditions symbol v - - - - 100- 4.0 0.5 na v ? a unit ? c/w 0.95 values values ? c - typ. unit 400 1 gate threshold voltage v gs (th) v ds = v gs , i d = 3.3ma 1.6 - - gate - source leakage current t j = 25 ? c - v gs = 18v, i d = 10a v gs = +22v, v ds = 0v t j = 150c i gss+ zero gate voltage drain current v ds = 400v, v gs = 0v i dss 0.1 - ? gate input resistance r g f = 1mhz, open drain - m ? t j = 25 ? c - 120 156 14 - static drain - source on - state resistance r ds(on) *3 t j = 100c - 137 2/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
SCTMU001F nc peak reverse recovery current i rrm *3 - 3.1 - a reverse recovery charge q rr *3 -53 4.3 - - v reverse recovery time t rr *3 i f = 10a, v r = 400v di/dt = 165a/ ? s -29-ns forward voltage v sd *3 v gs = 0v, i s = 10a - parameter - gate - drain charge ? body diode electrical characteristics (source-drain) (t a = 25 ? c) parameter symbol conditions total gate charge gate - source charge q gs *3 q g *3 values unit min. typ. max. q gd *3 - - unit -13- min. nc 59 18 max. - typ. conditions i d = 5a v dd = 200v v gs = 18v values rise time t r *3 v gs = 18v/0v r l = 60 ? - - r g = 0 ? 23 - ns 67 - 30 - -22 - turn - on delay time t d(on) *3 inverse diode continuous, forward current i s *1 turn - off delay time fall time symbol t d(off) *3 t f *3 ? gate charge characteristics (t a = 25 ? c) 60 - v dd = 300v, i d = 5a - - - 102 f = 1mhz - 14 s c iss v gs = 0v - 1218 - g fs *3 v ds = 10v, i d = 10a pf c rss ? electrical characteristics (t a = 25 ? c) parameter symbol conditions values unit min. typ. 2.7 max. reverse transfer capacitance transconductance input capacitance - output capacitance c oss v ds = 200v - a inverse diode direct current, pulsed i sm *2 a t c = 25 ? c --20 -- 3/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
SCTMU001F ? electrical characteristic curves 0 20 40 60 80 100 120 140 0 50 100 150 200 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t a = 25oc single pulse fig.1 power dissipation derating curve power dissipation : p d [w] junction temperature : tj [ c] fig.2 maximum safe operating area drain current : i d [a] drain - source voltage : v ds [v] fig.3 typical transient thermal resistance vs. pulse width transient thermal resistance : r th [k/w] pulse width : pw [s] 0.1 1 10 100 1000 1 10 100 1000 operation in this area is limited by r ds(on) p w =100 ? s p w = 1ms p w = 10ms p w =100ms t a = 25oc single pulse 4/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
SCTMU001F ? electrical characteristic curves fig.4 typical output characteristics drain current : i d [a] drain - source voltage : v ds [v] fig.5 tj = 150 c typical output characteristics drain current : i d [a] drain - source voltage : v ds [v] 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10121416 t a = 25oc pulsed 6v v gs = 18v v gs = 16v v gs = 14v v gs = 12v v gs = 10v v gs = 8v v gs = 6v 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 t a = 150oc pulsed v gs ? = ? 10v v gs ? = ??? 8v v gs ? = ??? 6v v gs ? = ??? 4v v gs ? = ? 18v v gs ? = ? 16v v gs ? = ? 14v v gs ? = ? 12v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 150 v ds = 10v i d = 3ma fig.6 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] fig.7 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] 0.001 0.01 0.1 1 10 0246810 t a = 150oc t a = 75oc t a = 25oc t a = -25oc v ds = 10v pulsed 5/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
SCTMU001F ? electrical characteristic curves 0 0.1 0.2 0.3 0.4 0.5 6 8 10 12 14 16 18 20 22 i d = 10a t a = 25oc pulsed 0 0.05 0.1 0.15 0.2 0.25 0.3 -50 0 50 100 150 v gs = 18v pulsed i d = 10a i d = 20a 0.1 1 0.1 1 10 100 v gs = 18v pulsed t a = 150oc t a = 125oc t a = 75oc t a = 25oc t a = -25oc fig.8 static drain - source on - state resistance vs. gate - source voltage static drain - source on-state resistance : r ds(on) [ ? ] gate - source voltage : v gs [v] fig.9 static drain - source on - state resistance vs. junction temperatur e static drain - source on-state resistance : r ds(on) [ ? ] junction temperature : t j [oc] fig.10 static drain - source on - state resistance vs. drain current static drain - source on-state resistance : r ds(on) [ ? ] drain current : i d [a] 0.1 1 10 0.1 1 10 v ds = 10v pulsed t a = 150oc t a = 75oc t a = 25oc t a = -25oc fig.11 transconductance vs. drain curren transconductance : g fs [s] drain current : i d [a] 6/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
SCTMU001F ? electrical characteristic curves 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rss t a = 25oc f = 1mhz v gs = 0v 0 5 10 15 20 0 102030405060 t a = 25oc v dd =200v i d = 5a pulsed fig.12 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.14 switching characteristics switching time : t [ns] drain current : i d [a] fig.13 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] 10 100 1000 0.1 1 10 100 t f t d(on) t d(off) t a = 25oc v dd = 300v v gs = 18v r g = 0 ? pulsed t r 7/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
SCTMU001F ? measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs i g(const.) v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v gs r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd 8/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
SCTMU001F ? dimensions (unit : mm) to-220ab 9/9 2013.12 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
r1102 a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14)
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